| PART |
Description |
Maker |
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32000C |
32M-Bit (2Mx16) CMOS Mask ROM(32M浣?2Mx16) CMOS?╄?ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N6VU1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| HY5DU323222QP HY5DU323222QP-5 HY5DU323222QP-6 |
32M(1Mx32) DDR SDRAM
|
Hynix Semiconductor
|
| AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC
Metal Film Resistor - RN 1/4 T1 18 5% A
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc.
Anpec Electronics, Corp.
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| CMS3216LAX-75EX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
